Gwajin Radiation na Kayan Gani da Semiconductor don Fitilun LED masu Jurewar Radiation

1. Gabatarwa & Bayyani

Wannan aikin, wanda aka gabatar a taron RADECS na 2018, yana magance ƙalubalen ababen more rayuwa a CERN: maye gurbin tsofaffin fitilun fluorescent da sodium a cikin ramukan masu saurin gudu da fasahar LED ta zamani mai inganci. Babban cikas shine yanayin radiation mai tsanani, tare da matakan shekara-shekara sun wuce $5 \times 10^{12}$ n_eq/cm² (daidai neutron 1 MeV a cikin Si) da kuma kashi 1 kGy. Takardar ta yi cikakken bayani game da yakin gwajin radiation don tantance kayan aiki da kansu—kayan gani da diodes na wutar lantarki—don haɗawa cikin fitilun LED masu jurewar radiation.

2. Kayan da ake Gwadawa

Binciken ya mayar da hankali kan nau'ikan kayan aiki guda biyu masu mahimmanci a cikin fitilar LED: abubuwan gani da diodes na gyara a cikin wutar lantarki.

3. Hanyar Gwajin Radiation & Tsarin Gwaji

Kayan Gani: An yi gwajin radiation na gamma-ray ta amfani da tushen ⁶⁰Co. Ma'aunin ma'auni na lalacewa shine Ragewar da Radiation ya Haifar (RIA), wanda aka auna ta hanyar spectrophotometric. An sarrafa ƙimar kashi da jimillar kashi (har zuwa 100 kGy) a hankali don kwaikwayon dogon lokaci a cikin ramukan masu saurin gudu.

Diodes na Semiconductor: An gudanar da gwajin radiation na proton a 24 GeV/c a wurin CERN IRRAD. Babban hanyar lalacewa a nan shine lalacewar motsi, inda barbashi masu ƙarfin zafi suka fitar da atom daga wuraren su na lattice, suna haifar da lahani waɗanda ke lalata aikin lantarki. Matakan da aka yi niyya sun wuce $8 \times 10^{13}$ n_eq/cm².

4. Sakamako & Bincike

5. Muhimman Bayanai & Hanyoyin Lalacewa

6. Bincike na Asali: Cikakken Bayani, Tsarin Ma'ana, Ƙarfafawa & Kurakurai, Bayanai masu Amfani

Cikakken Bayani: Wannan binciken na CERN yana ba da gaskiya mai tsauri don injiniyan yanayi mai tsanani: lokacin fuskantar radiation mai ionizing, asalin kayan abu shine komai, kuma abubuwan da ake sayar da su a kasuwa (COTS) suna kasawa ta hanyoyin da ake iya hasashen su, masu bambanta. Ƙimar gaske ba kawai a cikin matsayi Fused Quartz akan polycarbonate ba, amma a cikin ƙididdige ratawar aiki a ƙarƙashin yanayi iri ɗaya, na gaske don motsa zaɓin kayan aiki masu amfani.

Tsarin Ma'ana: Tsarin takardar shine samfurin bincike da ake amfani da shi. Ya fara da matsala mai bayyanawa ta aiki (tsufaffin haske), ya raba tsarin zuwa mafi raunin raka'a (kayan gani, na'urorin lantarki), yana sanya samfuran wakilai ga masu damuwa (gamma don kayan gani, protons don lalacewar motsi a cikin semiconductors), kuma yana tsara lalacewa zuwa hanyoyin jiki. Wannan sarkar dalili-dalili daga buƙatar tsarin zuwa kimiyyar kayan abu ba ta da kyau.

Ƙarfafawa & Kurakurai: Babban ƙarfi shine hanyar kwatanta. Gwada kayan daban-daban (gilashi vs. polymers) da fasahohin semiconductor (Si vs. SiC) a gefe guda a ƙarƙashin yanayi mai sarrafawa yana ba da jagora mai mahimmanci. Amfani da protons masu ƙarfin zafi don gwajin diode shima ƙarfi ne, yana kwaikwayon yanayin filin gauraye na ramin mai saurin gudu daidai. Duk da haka, aibi shine rashin gwajin tasirin haɗin gwiwa. A cikin fitilar gaske, ana yin radiation na kayan gani da na'urorin lantarki lokaci guda; tasirin haɗin gwiwa (misali, zafi daga lalacewar diode yana shafar kayan gani na robobi) ba a bincika su ba. Bugu da ƙari, yayin da fifikon SiC ya bayyana a fili, binciken bai shiga cikin nazarin fa'ida da farashi ba, wani muhimmin al'amari don babban tura a CERN ko a cikin wuraren nukiliya.

Bayanai masu Amfani: Ga injiniyoyi, abin da za a ɗauka ba shi da shakka: 1) Robobi na yau da kullun ba su da tushe don abubuwan gani a cikin filayen matakin kGy. Binciken ya kamata ya mayar da hankali kan polymers masu matakin radiation ko kuma a koma ga silica/quartz da aka haɗa. 2) SiC yana shirye don lokacin farko a cikin na'urorin lantarki don waɗannan yanayi. Bayanan suna goyon bayan amfani da shi akan Si don gyara da sauyawa. 3) Wannan hanyar cancantar matakin ɓangaren ya kamata ya zama tsarin ƙirƙira don ƙarfafa kowane tsari mai rikitarwa (na'urori masu auna firikwensin, kyamarori, na'urorin mutum-mutumi) don amfani a cikin masu saurin gudu, sararin samaniya (kamar yadda bayanan gwajin ɓangaren ESA ke goyan baya), ko fission/fusion reactors. Kada ku gwada tsarin gaba ɗaya da farko; gano kuma ku gwada mafi raunin hanyoyin haɗin kai.

7. Cikakkun Bayanai na Fasaha & Tsarin Lissafi

Lalacewar kayan gani sau da yawa ana yin samfurin ta hanyar coefficient na Ragewar da Radiation ya Haifar (RIA):

$\alpha_{RIA}(\lambda, D) = \frac{1}{L} \ln\left(\frac{T_0(\lambda)}{T_D(\lambda)}\right)$

inda $\alpha_{RIA}$ shine ma'aunin raguwa (cm⁻¹), $L$ shine kaurin samfurin, $T_0$ shine watsawa na farko, $T_D$ shine watsawa bayan kashi $D$, kuma $\lambda$ shine wavelength.

Don semiconductors, ana ƙididdige lalacewar motsi ta hanyar Asarar Makamashi mara Ionizing (NIEL), wanda ke daidaitawa da yawan barbashi $\Phi$ da ƙimar lalacewa $\kappa$:

$\Delta V_F \propto \kappa \cdot \Phi$

inda $\Delta V_F$ shine canjin ƙarfin lantarki na gaba. Ƙimar lalacewa $\kappa$ ya fi ƙanƙanta ga SiC fiye da Si, yana bayyana mafi girman ƙarfinsa.

8. Sakamakon Gwaji & Bayanin Gidan

Gidan Hasashe: Watsawar Gani vs. Kashi

Ka yi tunanin gidan tare da Jimillar Kashi (kGy, ma'aunin log) akan X-axis da Watsawar Gani na Al'ada a 500 nm (%) akan Y-axis.

• Layin Fused Quartz (FQ): Layin kusan kwance, yana nuna raguwa kaɗan daga 100% zuwa ~95% a 100 kGy. Wannan yana nuna ƙaramin duhu.
• Layin Borosilicate (BS): Layin mai santsi, yana saukowa daga 100% zuwa kusan 70-80% a 100 kGy.
• Layin PMMA & PC: Layukan biyu masu zurfi sosai. PMMA na iya faɗuwa zuwa ~30% kuma PC zuwa ƙasa da 20% watsawa a 100 kGy, yana nuna gazawar mai tsanani don aikace-aikacen gani.

Gidan Hasashe: Ƙaruwar Ƙarfin Lantarki na Gaba na Diode vs. Yawan Proton

Gidan tare da 1 MeV n_eq Fluence (n/cm², ma'aunin log) akan X-axis da Kashi na Ƙaruwa a cikin Ƙarfin Lantarki na Gaba ($\Delta V_F / V_{F0}$ %) akan Y-axis.

• Layin Diode na Si: Layi mai tsayi, mai lanƙwasa sama, yana nuna ƙaruwa na 50%, 100%, ko fiye a yawan ƙarfin zafi sama da $10^{14}$ n/cm².
• Layin Diode na SiC JBS: Ƙaruwa mai zurfi sosai, kusan layi, yana kasancewa ƙasa da ƙaruwar 10-15% ko da a cikin mafi girman gwajin ƙarfin zafi, yana nuna ƙarfinsa.

9. Tsarin Bincike: Nazarin Lamari ba na Lamba ba

Yanayi: Ƙungiya tana ƙirƙirar kyamara mai ƙarfin jurewar radiation don sa ido a cikin ginin ɗaukar makamashin nukiliya.

Aiwatar da Tsarin daga wannan Takarda:

1. Rarraba Tsarin: Gano mahimman, masu saurin radiation sub-components: Na'urar auna hoto (CMOS/CCD), taga/kariya ta ruwan tabarau, da'irar daidaita wutar lantarki.
2. Ayyana Mai Damuwa: Yanayin yana da manyan ƙimar kashi na gamma da kuma yawan neutron. Gamma da farko yana haifar da tasirin jimillar kashi na ionizing (TID), neutrons suna haifar da lalacewar motsi.
3. Zaɓi Kayan Gwaji:
   • Kayan Gani: Tushen samfuran kayan ruwan tabarau masu yuwuwa: silica da aka haɗa, gilashin da ke jure radiation (misali, BK7G18), da robobin gani na yau da kullun.
   • Kayan Lantarki: Tushen masu daidaita wutar lantarki masu yuwuwa: daidaitattun Si LDOs da madadin SiC ko ƙarfaffun Si.
4. Ai watar da Gwajin Kwatanta:
   • Yi radiation ga duk samfuran gani tare da Co-60 gamma zuwa kashin rayuwa da ake tsammani (misali, 10 kGy). Auna RIA a cikin kewayon bakan na'urar auna.
   • Yi radiation ga abubuwan lantarki tare da neutrons (ko protons masu ƙarfin zafi a matsayin wakili) zuwa yawan da ake tsammani. Kula da mahimman ma'auni kamar faɗuwar wutar lantarki, amo, da ruwan hoda.
5. Bincika & Zaɓi: Dangane da bayanai, zaɓi kayan/ɓangaren da ke da lalacewa mai karɓuwa. Misali, bayanan na iya tilasta zaɓin taga silica da aka haɗa da mai daidaita wutar lantarki na musamman, yayin da ya hana ruwan tabarau na robobi na yau da kullun da masu sarrafa Si na kasuwanci.

Wannan tsari, tsarin farko na ɓangaren, wanda aka yi wahayi kai tsaye daga takardar CERN, yana hana gazawar tsarin haɗin gwiwa mai tsada ta hanyar gano masu hana wasan kwaikwayo a matakin kayan a farkon tsarin ƙira.

10. Ayyuka na Gaba & Hanyoyin Ci Gaba

• Ƙirƙirar Kayan Ci Gaba: Haɓaka polymers "matakin radiation" tare da tsarin kwayoyin halitta da aka ƙera don jure samuwar cibiyar launi, mai yuwuwa ta amfani da nano-composites ko takamaiman abubuwan da ake ƙara don tattara radicals.
• Matsayin SiC a cikin Kayan Lantarki: Ƙarin amfani da SiC MOSFETs, JFETs, da diodes na JBS ba kawai a cikin haske ba amma a cikin duk raka'o'in canjin wutar lantarki a cikin yanayin radiation (misali, wutar lantarki na maganadisu, wutar lantarki na gaban gaba na na'urar ganowa).
• Tsarin Photonic Haɗin kai: Gwaji da ƙarfafa zaruruwan gani, masu raba, da masu gyara don watsa bayanai a cikin masu saurin gudu da kuma fusion reactors (misali, ITER), inda ka'idodin RIA suke amfani kai tsaye.
• Koyon Injin don Hasashe: Yin amfani da bayanan daga bincike kamar wannan don horar da samfuran da ke hasashen rayuwar ɓangaren da lalacewa dangane da kaddarorin kayan abu da bakan radiation, yana haɓaka zagayen ƙira don tsarin rad-hard.
• Faɗaɗawa zuwa Sabbin Yanayi: Aiwatar da wannan hanyar cancantar ga abubuwan don aikace-aikacen saman wata/Mars (wanda aka fallasa zuwa haskoki na sararin samaniya da abubuwan barbashi na rana) da kuma na'urorin fission na nukiliya na gaba.

11. Nassoshi

1. J. D. Devine et al., "Gwaje-gwajen radiation akan fitilun LED don LHC da sauran ramukan masu saurin gudu a CERN," IEEE Trans. Nucl. Sci., vol. 63, no. 2, pp. 841-847, Apr. 2016.
2. Ƙungiyar Kariyar Radiation ta CERN, "Ƙididdigar kashi da ƙimar ƙarfi a cikin ramukan LHC," Rahoton Ciki na CERN, 2017.
3. A. Floriduz et al., "Tasirin radiation akan manyan fitilun GaN LED masu ƙarfi don hasken mai saurin gudu," Ingancin Microelectronics, vol. 88-90, pp. 714-718, 2018.
4. M. Brugger et al., "Binciken lalacewar radiation akan diodes da LEDs don LHC da masu shigar da su," CERN-ATS-Note-2013-004 PERF, 2013.
5. NASA Jet Propulsion Laboratory, "Kayan Lantarki na Silicon Carbide don Yanayi masu Tsanani," [Kan layi]. Ana samuwa: https://www.jpl.nasa.gov.
6. Hukumar Sararin Samaniya ta Turai (ESA), "Jagororin Tabbatar da Ƙarfin Radiation na ɓangaren," ESCC Basic Specification No. 22900.
7. F. M. S. Lima et al., "Ragewar da radiation ya haifar a cikin zaruruwan gani: Cikakken bita," IEEE Trans. Nucl. Sci., vol. 67, no. 5, pp. 912-924, 2020.
8. A. J. Lelis et al., "Tushen hanyoyin rashin kwanciyar hankali na ƙarfin ƙofa a cikin SiC MOSFETs," IEEE Trans. Na'urorin Lantarki, vol. 65, no. 1, pp. 219-225, 2018.